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r07ds0493ej0200 rev.2.00 page 1 of 21 jun 29, 2011 preliminary datasheet rqa0009sxaqs silicon n-channel mos fet features ? high output power, high gain, high efficiency pout = +37.8 dbm, linear gain = 18 db, pae = 65% (v ds = 6 v, f = 520 mhz) ? compact package capabl e of surface mounting ? electrostatic discharge immunity test (iec standard, 61000-4-2, level4) outline 1. gate 2. source 3. drain 4. source 1 3 2, 4 1 2 3 4 renesas package code: plzz0004ca-a (package name : upak) note: marking is ?sx?. absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 16 v gate to source voltage v gss 5 v drain current i d 3.2 a channel dissipation pch note 15 w channel temperature tch 150 ?c storage temperature tstg ?55 to +150 ?c note: value at tc = 25 ?c this device is sensitive to electro static dischar ge. an adequate careful handling procedure is requested. r07ds0493ej0200 (previous: rej03g1566-0100) rev.2.00 jun 28, 2011
rqa0009sxaqs preliminary r07ds0493ej0200 rev.2.00 page 2 of 21 jun 29, 2011 electrical characteristics (ta = 25c) item symbol min. typ max. unit test conditions zero gate voltage drain current i dss ? ? 15 ? a v ds = 16 v, v gs = 0 gate to source leak current i gss ? ? 2 ? a v gs = 5 v, v ds = 0 gate to source cutoff voltage v gs(off) 0.15 0.5 0.8 v v ds = 6 v, i d = 1 ma forward transfer admittance |yfs| ? 3.2 ? s v ds = 6 v, i d = 1.6 a input capacitance ciss ? 76 ? pf v gs = 5 v, v ds = 0, f = 1 mhz output capacitance coss ? 40 ? pf v ds = 6 v, v gs = 0, f = 1 mhz reverse transfer capacitance crss ? 3.5 ? pf v dg = 6 v, v gs = 0, f = 1 mhz ? 33.1 ? dbm output power pout ? 2.0 ? w power added efficiency pae ? 65.7 ? % v ds = 3.6 v, i dq = 200 ma f = 155 mhz, pin = +20 dbm (100 mw) ? 38.6 ? dbm output power pout ? 7.2 ? w power added efficiency pae ? 62.5 ? % v ds = 7.0 v, i dq = 200 ma f = 155 mhz, pin = +25 dbm (316 mw) ? 33.0 ? dbm output power pout ? 2.0 ? w power added efficiency pae ? 68.5 ? % v ds = 3.6 v, i dq = 200 ma f = 360 mhz, pin = +20 dbm (100 mw) ? 38.8 ? dbm output power pout ? 7.6 ? w power added efficiency pae ? 69.2 ? % v ds = 7.0 v, i dq = 200 ma f = 360 mhz, pin = +25 dbm (316 mw) ? 33.1 ? dbm output power pout ? 2.1 ? w power added efficiency pae ? 66.4 ? % v ds = 3.6 v, i dq = 200 ma f = 465 mhz, pin = +20 dbm (100 mw) ? 39.0 ? dbm output power pout ? 8.0 ? w power added efficiency pae ? 67.9 ? % v ds = 7.0 v, i dq = 200 ma f = 465 mhz, pin = +25 dbm (316 mw) ? 35.2 ? dbm output power pout ? 3.3 ? w power added efficiency pae ? 60 ? % v ds = 4.8 v, i dq = 300 ma f = 465 mhz, pin = +17 dbm (50 mw) ? 37.8 ? dbm output power pout ? 6.0 ? w power added efficiency pae ? 65 ? % v ds = 6 v, i dq = 180 ma f = 520 mhz, pin = +25 dbm (316 mw) main characteristics maximum channel power dissipation curve 0 50 100 case temperature t c (c) 150 200 0 channel power dissipation pch (w) 5 10 15 20 drain to source voltage v ds (v) drain current i d (a) typical output characteristics 0 1 2 3 pulse test 02 4 6 810 4 v gs = 1.0 v 2.0 v 1.5 v 1.25 v 1.75 v
rqa0009sxaqs preliminary r07ds0493ej0200 rev.2.00 page 3 of 21 jun 29, 2011 gate to source voltage v gs (v) input capacitance ciss (pf) input capacitance vs. gate to source voltage output capacitance vs. drain to source voltage output capacitance coss (pf) 10 100 1000 drain to source voltage v ds (v) reverse transfer capacitance vs. drain to gate voltage 0.1 1 10 drain to gate voltage v dg (v) 1 10 100 reverse transfer capacitance crss (pf) 40 50 60 70 80 -5 -4 -3 -2 -1 1 2 3 4 5 0 90 msg, mag vs. frequency maximum stable gain msg (db) maximum available gain mag (db) frequency f (mhz) 0.1 1 10 v ds = 0 f = 1 mhz v gs = 0 f = 1 mhz v gs = 0 f = 1 mhz 0 500 1000 1500 2000 5 15 25 30 20 10 0 msg mag v ds = 6 v i d = 180 ma 0.1 1.0 10.0 0.1 1.0 10.0 drain current i d (a) forward transfer admittance |y fs | (s) forward transf er admittance vs. drain current 0 0.5 1.0 1.5 2.0 0 2 1 4 drain current i d (a) forward transfer admittance |y fs | (s) typical transfer characterisitics 3 v ds = 6 v pulse test gate to source voltage v gs (v) |y fs | i d v ds = 6 v pulse test
rqa0009sxaqs preliminary r07ds0493ej0200 rev.2.00 page 4 of 21 jun 29, 2011 evaluation circuit 1 (@v dd = 3.6 & 7.0v tuning, f = 155 mhz) c1, c3, c10, c11 c2 c4, c13 c5, c12 c6 c7 c8 c9 100 pf chip capacitor 27 pf chip capacitor 1000 pf chip capacitor 1 f/+16v chip tantalum capacitor 18 pf chip capacitor 22 pf chip capacitor 56 pf chip capacitor 4 pf chip capacitor rf out rf in vgg vdd c1 c2 c3 c5 c6 c12 c13 l1 l4 l2 l3 r1 50 50 c11 c9 c7 c8 c10 c4 r2 l1 l2 l3 l4 r1 r2 33 nh chip inductor 3.6 nh chip inductor 7.5 nh chip inductor 8 turns d: 0.5 mm, 2.4 mm enamel wire 33 chip resistor 1 k chip resistor power gain, power added efficiency vs. input power power gain pg (db) input power pin (dbm) output power, drain current vs. input power output power pout (dbm) power added efficiency pae (%) input power pin (dbm) drain current i d (a) 0 5 15 30 10 20 25 0 30 10 20 40 0 20 40 60 10 15 25 40 0 1 2.5 20 1.5 v ds = 3.6 v i dq = 200 ma f = 155 mhz i d 30 35 0.5 2 3 80 pout 0 5 15 30 10 20 25 v ds = 3.6 v i dq = 200 ma f = 155 mhz pae pg output power, drain current vs. frequency 10 20 40 0 1 3 25 15 2 140 190 120 0 10 30 20 40 80 15 5 60 20 25 30 50 70 power gain pg (db) 120 150 190 power gain, power added efficiency vs. frequency power added efficiency pae (%) 30 35 0.5 1.5 2.5 frequency f (mhz) drain current i d (a) output power pout (dbm) frequency f (mhz) pg pae 170 130 160 180 150 130 140 160 170 180 v ds = 3.6v i dq = 200 ma p in = +20dbm pout id v ds = 3.6v i dq = 200 ma p in = +20dbm
rqa0009sxaqs preliminary r07ds0493ej0200 rev.2.00 page 5 of 21 jun 29, 2011 power gain pg (db) 0 100 200 500 400 power gain, power added efficiency vs. idling current 0 10 40 30 20 0 20 80 60 40 output power, drain current vs. idling current 10 30 40 2.5 3 35 20 300 400 500 0 power added efficiency pae (%) 200 1 output power pout (dbm) drain current i d (a) idling current i dq (ma) idling current i dq (ma) 25 15 1.5 2 0.5 0 100 pout id v ds = 3.6v f = 155 mhz p in = +20 dbm pg 300 pae v ds = 3.6 v f = 155 mhz p in = +20 dbm power gain, power added efficiency vs. input power power gain pg (db) input power pin (dbm) output power, drain current vs. input power output power pout (dbm) power added efficiency pae (%) input power pin (dbm) drain current i d (a) 0 10 30 40 0 20 40 60 0 5 15 30 10 20 v ds = 7 v f = 155 mhz i dq = 200 ma 20 80 10 15 25 40 0 2.0 2.5 0 5 15 30 10 20 20 1.0 0.5 v ds = 7 v f = 155 mhz i dq = 200 ma i d 30 35 1.5 3.0 25 25 pae pout pg power gain pg (db) 3 3.5 4 54.5 power gain, power added efficiency vs. drain to source voltage 0 10 40 30 20 0 20 80 60 40 output power, drain current vs. drain to source voltage drain to source voltage v ds (v) 10 20 40 0 2 i dq = 200 ma f = 155mhz p in = +20dbm 3 30 15 2.5 4 4.5 5 id pout 3 power added efficiency pae (%) 3.5 1 output power pout (dbm) drain current i d (a) drain to source voltage v ds (v) i dq = 200 ma f = 155 mhz p in = +20dbm pg pae 25 35 1.5 0.5
rqa0009sxaqs preliminary r07ds0493ej0200 rev.2.00 page 6 of 21 jun 29, 2011 frequency f (mhz) 120 140 180 160 190 power gain, power added efficiency vs. frequency 140 150 160 170 190 frequency f (mhz) 120 power gain pg (db) 24 6 10 8 power gain, power added efficiency vs. drain to source voltage 0 10 40 30 20 0 20 80 60 40 output power, drain current vs. drain to source voltage drain to source voltage v ds (v) 10 30 50 0 2 i dq = 200 ma pin = +25 dbm f = 155 mhz 4 40 20 3 6810 id pout 2 power added efficiency pae (%) 0 1 3 0.5 2.5 10 20 40 25 15 pae 0 15 25 20 30 4 1 30 35 output power pout (dbm) 130 150 170 1.5 2 output power, drain current vs. frequency drain current i d (a) power gain pg (db) 5 10 20 50 70 60 30 30 40 130 180 output power pout (dbm) drain current i d (a) power added efficiency pae (%) drain to source voltage v ds (v) power gain pg (db) 0 100 200 500 400 power gain, power added efficiency vs. idling current 0 10 40 30 20 0 20 80 60 40 output power, drain current vs. idling current 10 30 40 2.5 3 35 20 300 400 500 0 power added efficiency pae (%) 200 1 output power pout (dbm) drain current i d (a) idling current i dq (ma) idling current i dq (ma) 25 15 1.5 2 0.5 0 100 pout id v ds = 7v p in = +25 dbm f = 155 mhz pg pae pg 300 v ds = 7 v p in = +25 dbm f = 155 mhz i dq = 200 ma pin = +25 dbm f = 155 mhz pg pae id pout v ds = 7v i dq = 200 ma pin = +25 dbm v ds = 7v i dq =200 ma pin = +25 dbm
rqa0009sxaqs preliminary r07ds0493ej0200 rev.2.00 page 7 of 21 jun 29, 2011 evaluation circuit 1 (@v dd = 3.6 & 7.0v tuning, f = 360 mhz) c1 c2, c3,c8,c10 c4, c13 c5, c12, c15 c6, c14 c7 c9, c11 22 pf chip capacitor 10 pf chip capacitor 100 pf chip capacitor 1000 pf chip capacitor 1 f / +16v chip tantalum capacitor 5 pf chip capacitor 12 pf chip capacitor rfout rfin vgg vdd c1 c2 c4 c7 c10 l1 l3 r1 50 50 c14 c13 c12 c3 c8 c6 l2 c5 c15 l4 c9 c11 l1 l2 l3 l4 r1 6.8 nh chip inductor 1.0 nh chip inductor 1.6 nh chip inductor 8 turns d: 0.5 mm, 2.4 mm enamel wire 6.8k chip resistor power gain, power added efficiency vs. input power power gain pg (db) input power pin (dbm) output power, drain current vs. input power output power pout (dbm) power added efficiency pae (%) input power pin (dbm) drain current i d (a) 0 5 15 30 10 20 25 0 30 10 20 40 0 20 40 60 10 15 25 40 0 1 2.5 20 1.5 v ds = 3.6 v i dq = 200 ma f = 360 mhz i d 30 35 0.5 2 3 80 pout 0 5 15 30 10 20 25 v ds = 3.6 v i dq = 200 ma f = 360 mhz pae pg output power, drain current vs. frequency 10 20 40 0 1 3 25 15 2 360 400 id 300 0 10 30 20 40 80 15 5 60 20 25 30 50 70 power gain pg (db) 300 350 400 power gain, power added efficiency vs. frequency power added efficiency pae (%) 30 35 0.5 1.5 2.5 frequency f (mhz) drain current i d (a) output power pout (dbm) frequency f (mhz) pg v ds = 3.6v i dq = 200 ma p in = +20dbm pae 320 380 340 pout v ds = 3.6v i dq = 200 ma p in = +20dbm
rqa0009sxaqs preliminary r07ds0493ej0200 rev.2.00 page 8 of 21 jun 29, 2011 power gain pg (db) 0 100 200 500 400 power gain, power added efficiency vs. idling current 0 10 40 30 20 0 20 80 60 40 output power, drain current vs. idling current 10 30 40 2.5 3 35 20 300 400 500 0 power added efficiency pae (%) 200 1 output power pout (dbm) drain current i d (a) idling current i dq (ma) idling current i dq (ma) 25 15 1.5 2 0.5 0 100 pout id pg 300 pae v ds = 3.6 v f = 360 mhz p in = +20 dbm v ds = 3.6v f = 360 mhz p in = +20 dbm power gain pg (db) 3 3.5 4 5 4.5 power gain, power added efficiency vs. drain to source voltage 0 10 40 30 20 0 20 80 60 40 output power, drain current vs. drain to source voltage drain to source voltage v ds (v) 10 30 40 0 2 i dq = 200 ma f = 360mhz pin=+20dbm 3 35 20 4 4.5 5 id pout 3 power added efficiency pae (%) 3.5 1 output power pout (dbm) drain current i d (a) drain to source voltage v ds (v) i dq = 200 ma f = 360 mhz pin=+20dbm pg pae 15 25 0.5 1.5 2.5 power gain, power added efficiency vs. input power power gain pg (db) input power pin (dbm) output power, drain current vs. input power output power pout (dbm) power added efficiency pae (%) input power pin (dbm) drain current i d (a) 0 5 15 30 10 20 25 0 30 10 20 40 0 20 40 60 10 15 25 40 0 1 2.5 20 1.5 i d 30 35 0.5 2 3 80 pout 0 5 15 30 10 20 25 pg pae v ds = 7 v i dq = 200 ma f = 360 mhz v ds = 7 v i dq = 200 ma f = 360 mhz
rqa0009sxaqs preliminary r07ds0493ej0200 rev.2.00 page 9 of 21 jun 29, 2011 output power, drain current vs. frequency 10 20 40 0 1 3 25 15 2 350 400 pout id 300 0 10 30 20 40 80 15 5 60 20 25 30 50 70 power gain pg (db) 300 350 400 power gain, power added efficiency vs. frequency power added efficiency pae (%) 30 35 0.5 1.5 2.5 frequency f (mhz) drain current i d (a) output power pout (dbm) frequency f (mhz) pg pae power gain pg (db) 0 100 200 500 400 power gain, power added efficiency vs. idling current 0 10 40 30 20 0 20 80 60 40 output power, drain current vs. idling current 10 30 40 2.5 3 35 20 300 400 500 0 power added efficiency pae (%) 200 1 output power pout (dbm) drain current i d (a) idling current i dq (ma) idling current i dq (ma) 25 15 1.5 2 0.5 0 100 pout id v ds = 7v p in = +25 dbm f = 360 mhz pg 300 pae v ds = 7v i dq = 200 ma p in = +25dbm v ds = 7v i dq = 200 ma p in = +25dbm v ds = 7 v p in = +25 dbm f = 360 mhz power gain pg (db) 24 6 10 8 power gain, power added efficiency vs. drain to source voltage 0 10 40 30 20 0 20 80 60 40 output power, drain current vs. drain to source voltage drain to source voltage v ds (v) 10 30 50 0 2 i dq = 200 ma p in = +25 dbm f = 360mhz 4 40 20 3 6810 id pout 2 power added efficiency pae (%) 4 1 output power pout (dbm) drain current i d (a) drain to source voltage v ds (v) pg pae i dq = 200 ma p in = +25 dbm f = 360mhz
rqa0009sxaqs preliminary r07ds0493ej0200 rev.2.00 page 10 of 21 jun 29, 2011 evaluation circuit 1 (@v dd = 3.6 & 7.0v tuning, f = 465 mhz) c1 c2, c3, c7, c10 c4, c13 c5, c12, c15 c6, c14 c8 22 pf chip capacitor 10 pf chip capacitor 100 pf chip capacitor 1000 pf chip capacitor 1 f / +16v chip tantalum capacitor 7 pf chip capacitor rfout rfin vgg vdd c1 c2 c4 c7 c10 l1 l3 r1 50 50 c14 c13 c12 c3 c8 c6 l2 c5 c15 l4 c9 c11 power gain, power added efficiency vs. input power power gain pg (db) input power pin (dbm) output power, drain current vs. input power output power pout (dbm) power added efficiency pae (%) input power pin (dbm) drain current i d (a) 0 5 15 30 10 20 25 0 30 10 20 40 0 20 40 60 10 15 25 40 0 1 2.5 20 1.5 v ds = 3.6 v i dq = 200 ma f = 465 mhz i d 30 35 0.5 2 3 80 0 5 15 30 10 20 25 v ds = 3.6 v i dq = 200 ma f = 465 mhz pae pg pout c9 c11 l1 l2, l3 l4 r1 12 pf chip capacitor 2 pf chip capacitor 2.7 nh chip inductor 1.0 nh chip inductor 8 turns d: 0.5 mm,f2.4mm enamel wire 6.8k chip resistor output power, drain current vs. frequency 10 20 40 0 1 3 25 15 2 470 490 pout id 440 0 10 30 20 40 80 15 5 60 20 25 30 50 70 power gain pg (db) 440 470 490 power gain, power added efficiency vs. frequency power added efficiency pae (%) 30 35 0.5 1.5 2.5 frequency f (mhz) drain current i d (a) output power pout (dbm) frequency f (mhz) pg v ds = 3.6 v i dq = 200 ma p in = +20dbm pae 450 460 480 450 460 480 v ds = 3.6 v i dq = 200 ma p in = +20dbm
rqa0009sxaqs preliminary r07ds0493ej0200 rev.2.00 page 11 of 21 jun 29, 2011 power gain pg (db) 0 100 200 500 400 power gain, power added efficiency vs. idling current 0 10 40 30 20 0 20 80 60 40 output power, drain current vs. idling current 10 30 40 2.5 3 35 20 300 400 500 0 power added efficiency pae (%) 200 1 output power pout (dbm) drain current i d (a) idling current i dq (ma) idling current i dq (ma) 25 15 1.5 2 0.5 0 100 pout id v ds = 3.6v p in = +20 dbm f = 465 mhz pg 300 v ds = 3.6 v p in = +20 dbm f = 465 mhz pae power gain, power added efficiency vs. input power power gain pg (db) input power pin (dbm) output power, drain current vs. input power output power pout (dbm) power added efficiency pae (%) input power pin (dbm) drain current i d (a) 0 5 15 30 10 20 25 0 30 10 20 40 0 20 40 60 10 15 25 40 0 1 2.5 20 1.5 v ds = 7 v i dq = 200 ma f = 465 mhz i d 30 35 0.5 2 3 80 0 5 15 30 10 20 25 v ds = 7 v i dq = 200 ma f = 465 mhz pae pg pout power gain pg (db) 3 3.5 4 5 4.5 power gain, power added efficiency vs. drain to source voltage 0 10 40 30 20 0 20 80 60 40 output power, drain current vs. drain to source voltage drain to source voltage v ds (v) 10 30 40 0 2 i dq = 200 ma f = 465mhz pin=+20dbm 3 35 20 4 4.5 5 id pout 3 power added efficiency pae (%) 3.5 1 output power pout (dbm) drain current i d (a) drain to source voltage v ds (v) i dq = 200 ma f = 465 mhz pin=+20dbm pg pae 15 25 0.5 1.5 2.5
rqa0009sxaqs preliminary r07ds0493ej0200 rev.2.00 page 12 of 21 jun 29, 2011 output power, drain current vs. frequency 10 20 40 0 1 3 25 15 2 470 490 pout id 440 0 10 30 20 40 80 15 5 60 20 25 30 50 70 power gain pg (db) 440 470 490 power gain, power added efficiency vs. frequency power added efficiency pae (%) 30 35 0.5 1.5 2.5 frequency f (mhz) drain current i d (a) output power pout (dbm) frequency f (mhz) pg v ds = 7v i dq = 200 ma p in = +25dbm pae power gain pg (db) 0 100 200 500 400 power gain, power added efficiency vs. idling current 0 10 40 30 20 0 20 80 60 40 output power, drain current vs. idling current 10 30 40 2.5 3 35 20 300 400 500 0 power added efficiency pae (%) 200 1 output power pout (dbm) drain current i d (a) idling current i dq (ma) idling current i dq (ma) 25 15 1.5 2 0.5 0 100 pout id v ds = 7v p in = +25 dbm f = 465 mhz pg 300 v ds = 7 v p in = +25 dbm f = 465 mhz pae 450 460 480 450 460 480 power gain pg (db) 24 6 10 8 power gain, power added efficiency vs. drain to source voltage 0 10 40 30 20 0 20 80 60 40 output power, drain current vs. drain to source voltage drain to source voltage v ds (v) 10 30 50 0 2 i dq = 200 ma p in = +25dbm f = 465mhz 4 40 20 3 6810 id pout 2 power added efficiency pae (%) pae 4 1 output power pout (dbm) drain current i d (a) drain to source voltage v ds (v) pg v ds = 7v i dq = 200 ma p in = +25dbm i dq = 200 ma p in = +25dbm f = 465mhz
rqa0009sxaqs preliminary r07ds0493ej0200 rev.2.00 page 13 of 21 jun 29, 2011 evaluation circuit (f = 465 mhz@vds=4.8v) rfout rfin vg vd c1 c2 c5 c8 c10 l1 l3 r1 c1, c5, c11, c12 c2, c8 c3 c4, c9, c10 c6, c13 c7, c14 l1 l2 l3 r1 r2 50 50 c14 c12 c11 r2 c3 c4 c9 c7 l2 100 pf chip capacitor 22 pf chip capacitor 15 pf chip capacitor 10 pf chip capacitor 2200 pf chip capacitor 1 f / 35 v chip tantalum capacitor 1 nh chip inductor 1.8 nh chip inductor 8 turns d: 0.5 mm, 2.4 mm enamel wire 670 chip resistor 6.8 k chip resistor c6 c13
rqa0009sxaqs preliminary r07ds0493ej0200 rev.2.00 page 14 of 21 jun 29, 2011 frequency f (mhz) power gain pg (db) power gain, power added efficiency vs. frequency input return loss vs. frequency 460 470 480 frequency f (mhz) 450 power gain, power added efficiency, vs. drain to source voltage power gain pg (db) drain to source voltage v ds (v) 15 17 21 40 50 i dq = 300 ma f = 465 mhz p in = +17 dbm 70 18 16 60 5678 pg pae 3 power gain, power added efficiency vs. input power power gain pg (db) input power pin (dbm) output power, drain current vs. input power output power pout (dbm) power added efficiency pae (%) power added efficiency pae (%) input return loss rl (db) power added efficiency pae (%) input power pin (dbm) 40 60 80 50 70 16 18 20 17 19 15 17 21 40 50 v ds = 4.8 v f = 465 mhz p in = +17 dbm 70 18 16 60 19 20 45 55 65 power gain pg (db) idling current i dq (a) 0 0.1 0.2 0.3 0.50.4 power gain, power added efficiency vs. idling current power added efficiency pae (%) pae pg pae v ds = 4.8 v i dq = 300 ma pin = +17 dbm -30 -15 -5 -10 0 4 drain current i d (a) -25 -20 465 475 455 19 20 45 55 65 pg 460 470 480 450 465 475 455 v ds = 4.8 v i dq = 300 ma pin = +17 dbm 0 5 15 30 10 20 25 0 5 10 20 25 0 20 40 60 80 0 10 15 25 40 0 0.6 1.2 1.4 20 0.8 0.2 v ds = 4.8 v i dq = 300 ma f = 465 mhz i d pae pg 5 30 35 0.4 1.0 1.6 15 100 pout 0 5 15 30 10 20 25 v ds = 4.8 v i dq = 300 ma f = 465 mhz
rqa0009sxaqs preliminary r07ds0493ej0200 rev.2.00 page 15 of 21 jun 29, 2011 evaluation circuit (f = 520 mhz) out in vg vd c1 c2 c4 c7 c9 l2 l1 l3 r1 c1, c4, c10, c11 c2 c3 c5, c12 c6, c13 c7 c8 c9 l1 l2 l3 r1 r2 50 50 c12 c11 c10 r2 c5 c3 c8 c6 c13 100 pf chip capacitor 22 pf chip capacitor 5 pf chip capacitor 1000 pf chip capacitor 1 f chip tantalum capacitor 18 pf chip capacitor 10 pf chip capacitor 7 pf chip capacitor 8 turns d: 0.5 mm, 2.4 mm enamel wire 1 nh chip inductor 1.8 nh chip inductor 670 chip resistor 6.8 k chip resistor
rqa0009sxaqs preliminary r07ds0493ej0200 rev.2.00 page 16 of 21 jun 29, 2011 frequency f (mhz) 450 470 490 510 530 550 power gain pg (db) power gain, power added efficiency vs. frequency input return loss vs. frequency 470 490 510 530 550 frequency f (mhz) 450 power gain pg (db) idling current i dq (a) 0 0.1 0.2 0.3 0.50.4 power gain, power added efficiency vs. idling current v ds = 6 v f = 520 mhz p in = +25 dbm 0 5 20 15 10 60 65 80 75 70 power gain, power added efficiency, vs. drain to source voltage power gain pg (db) drain to source voltage v ds (v) 0 10 20 30 50 i dq = 180 ma f = 520 mhz p in = +25 dbm 70 15 5 60 56789 pg pae 3 power gain, power added efficiency vs. input power power gain pg (db) input power pin (dbm) output power, drain current vs. input power output power pout (dbm) power added efficiency pae (%) power added efficiency pae (%) input return loss rl (db) power added efficiency pae (%) power added efficiency pae (%) input power pin (dbm) 0 40 80 20 60 0 10 20 5 15 pg pae v ds = 6 v i dq = 180 ma pin = +25 dbm pg pae v ds = 6 v i dq = 180 ma pin = +25 dbm -20 -15 -5 -10 0 4 40 drain current i d (a) pae pg 0 5 10 20 25 0 20 40 60 80 0 5 15 30 10 20 v ds = 6 v f = 520 mhz i dq = 180 ma 15 100 0 10 15 25 40 0 0.6 1.2 1.4 0 5 15 30 10 20 20 0.8 0.2 v ds = 6 v f = 520 mhz i dq = 180 ma i d pout 5 30 35 0.4 1.0 1.6 25 25
rqa0009sxaqs preliminary r07ds0493ej0200 rev.2.00 page 17 of 21 jun 29, 2011 10 5 4 3 2 1.5 1 .8 -2 -3 -4 -5 -10 .6 .4 .2 0 -.2 -.4 -.6 -.8 -1 -1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 10 5 4 3 2 1.5 1 .8 -2 -3 -4 -5 -10 .6 .4 .2 0 -.2 -.4 -.6 -.8 -1 -1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 scale: 5 / div. s 11 parameter vs. frequency s 21 parameter vs. frequency scale: 0.01 / div. s 12 parameter vs. frequency s 22 parameter vs. frequency 30 60 90 120 150 180 -150 -90 -60 -30 -120 0 test condition: v ds = 6 v, i dq = 180 ma, z o = 50 100 to 1000 mhz (50 mhz step) 1000 to 2500 mhz (100 mhz step) test condition: v ds = 6 v, i dq = 180 ma, z o = 50 100 to 1000 mhz (50 mhz step) 1000 to 2500 mhz (100 mhz step) test condition: v ds = 6 v, i dq = 180 ma, z o = 50 100 to 1000 mhz (50 mhz step) 1000 to 2500 mhz (100 mhz step) test condition: v ds = 6 v, i dq = 180 ma, z o = 50 100 to 1000 mhz (50 mhz step) 1000 to 2500 mhz (100 mhz step) 30 60 90 120 150 180 -150 -90 -60 -30 -120 0
rqa0009sxaqs preliminary r07ds0493ej0200 rev.2.00 page 18 of 21 jun 29, 2011 scale: 5 / div. s 11 parameter vs. frequency s 21 parameter vs. frequency scale: 0.01 / div. s 12 parameter vs. frequency s 22 parameter vs. frequency 10 5 4 3 2 1.5 1 .8 -2 -3 -4 -5 -10 .6 .4 .2 0 -.2 -.4 -.6 -.8 -1 -1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 30 60 90 120 150 180 -150 -90 -60 -30 -120 0 10 5 4 3 2 1.5 1 .8 -2 -3 -4 -5 -10 .6 .4 .2 0 -.2 -.4 -.6 -.8 -1 -1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 test condition: v ds = 4.8 v, i dq = 300 ma, z o = 50 100 to 1000 mhz (50 mhz step) 1000 to 2500 mhz (100 mhz step) 0 30 60 90 120 150 180 -150 -90 -60 -30 -120 test condition: v ds = 4.8 v, i dq = 300 ma, z o = 50 100 to 1000 mhz (50 mhz step) 1000 to 2500 mhz (100 mhz step) test condition: v ds = 4.8 v, i dq = 300 ma, z o = 50 100 to 1000 mhz (50 mhz step) 1000 to 2500 mhz (100 mhz step) test condition: v ds = 4.8 v, i dq = 300 ma, z o = 50 100 to 1000 mhz (50 mhz step) 1000 to 2500 mhz (100 mhz step)
rqa0009sxaqs preliminary r07ds0493ej0200 rev.2.00 page 19 of 21 jun 29, 2011 s parameter (v ds = 6 v, i dq = 180 ma, zo = 50 ? ) s11 s21 s12 s22 f (mhz) mag ang (deg.) mag ang (deg.) mag ang (deg.) mag ang (deg.) 100 0.868 -154.0 9.85 88.8 0.019 1.2 0.706 -166.8 150 0.861 -159.4 5.42 77.2 0.018 -6.3 0.725 -168.9 200 0.882 -163.9 3.64 68.2 0.016 -14.1 0.755 -170.6 250 0.892 -166.8 2.64 58.5 0.016 -19.2 0.768 -170.6 300 0.899 -169.5 2.06 51.8 0.014 -22.1 0.792 -171.2 350 0.910 -171.6 1.61 45.1 0.013 -27.2 0.805 -171.5 400 0.918 -173.4 1.28 40.3 0.013 -29.3 0.827 -172.2 450 0.926 -175.2 1.04 36.0 0.011 -34.1 0.840 -173.1 500 0.932 -176.8 0.84 31.8 0.010 -33.1 0.855 -173.8 550 0.936 -178.2 0.73 28.8 0.009 -34.5 0.869 -174.6 600 0.940 -179.5 0.62 26.4 0.008 -34.6 0.880 -175.6 650 0.941 179.2 0.54 23.1 0. 007 -36.5 0.892 -176.5 700 0.944 178.1 0.45 20.2 0. 006 -32.7 0.901 -177.3 750 0.945 176.9 0.41 18.3 0. 006 -32.0 0.906 -178.0 800 0.944 175.9 0.37 16.4 0. 005 -25.3 0.915 -179.4 850 0.944 174.6 0.31 13.9 0.004 -22.3 0.919 180.0 900 0.943 173.4 0.30 12.1 0.004 -15.2 0.929 178.9 950 0.943 172.3 0.26 10.6 0.003 0.3 0.930 178.1 1000 0.946 171.1 0.23 8. 6 0.003 9.1 0.936 177.2 1050 0.949 170.2 0.22 7. 3 0.003 20.6 0.940 176.5 1100 0.951 169.4 0.21 6. 5 0.004 36.9 0.943 175.5 1150 0.952 168.7 0.18 5. 3 0.004 40.3 0.944 174.7 1200 0.952 167.8 0.18 4. 3 0.004 52.0 0.950 174.1 1250 0.952 167.0 0.16 3. 7 0.005 53.2 0.951 173.3 1300 0.952 166.2 0.14 2. 2 0.005 56.8 0.949 172.6 1350 0.952 165.4 0.14 1. 3 0.006 60.9 0.956 171.7 1400 0.952 164.6 0.13 0. 8 0.006 64.0 0.958 171.0 1450 0.952 164.0 0.12 0. 1 0.007 62.2 0.957 170.3 1500 0.952 163.3 0.11 -0.8 0.008 65.4 0.956 169.5 1550 0.952 162.1 0.11 -1.8 0.008 65.9 0.959 168.5 1600 0.952 160.8 0.10 -2.7 0.009 65.6 0.960 168.2 1650 0.952 159.7 0.10 -3.6 0.009 65.9 0.960 167.4 1700 0.952 158.5 0.09 -4.5 0.010 66.6 0.962 166.4 1750 0.952 157.3 0.08 -4.7 0.010 66.2 0.967 165.8 1800 0.952 156.4 0.08 -5.0 0.011 66.5 0.968 165.3 1850 0.952 155.7 0.08 -4.7 0.011 66.5 0.965 164.5 1900 0.953 154.7 0.07 -4.9 0.012 67.0 0.967 163.7 1950 0.958 153.9 0.07 -5.2 0.012 67.0 0.976 163.2 2000 0.965 153.6 0.07 -4.6 0.013 65.5 0.972 162.9 2050 0.963 153.3 0.07 -4.9 0.013 65.4 0.972 161.9 2100 0.956 152.9 0.06 -4.2 0.014 65.3 0.976 161.0 2150 0.950 152.2 0.06 -3.5 0.014 65.2 0.981 160.7 2200 0.944 151.6 0.06 -3.8 0.015 63.9 0.977 160.1 2250 0.936 150.7 0.06 -3.5 0.015 63.9 0.977 159.5 2300 0.932 149.3 0.05 -3.4 0.016 63.0 0.978 158.9 2350 0.932 148.1 0.05 -3.6 0.016 62.8 0.981 158.4 2400 0.929 147.3 0.05 -3.0 0.017 63.0 0.977 158.0 2450 0.923 146.3 0.05 -3.6 0.017 61.3 0.977 157.2 2500 0.917 144.9 0.05 -3.0 0.017 61.8 0.980 156.8
rqa0009sxaqs preliminary r07ds0493ej0200 rev.2.00 page 20 of 21 jun 29, 2011 s parameter (v ds = 4.8 v, i dq = 300 ma, zo = 50 ? ) s11 s21 s12 s22 f (mhz) mag ang (deg.) mag ang (deg.) mag ang (deg.) mag ang (deg.) 100 0.772 -157.0 9.63 88.9 0.013 -1.0 0.776 -172.1 150 0.794 -162.8 5.54 79.0 0.013 -6.3 0.784 -173.8 200 0.812 -167.3 3.91 71.6 0.012 -11.1 0.799 -174.8 250 0.818 -170.4 2.98 64.7 0.011 -13.5 0.805 -174.8 300 0.824 -173.1 2.36 59.1 0.011 -15.2 0.818 -175.0 350 0.831 -175.0 1.92 53.6 0.011 -20.4 0.824 -175.1 400 0.836 -176.6 1.60 48.7 0.010 -21.4 0.837 -175.4 450 0.841 -178.3 1.36 44.8 0.009 -23.3 0.843 -175.8 500 0.848 -179.9 1.15 40.5 0.008 -22.9 0.859 -176.8 550 0.851 179.0 1.00 37.1 0. 008 -22.2 0.868 -177.1 600 0.851 177.7 0.87 33.9 0. 007 -24.8 0.874 -177.4 650 0.852 176.3 0.77 30.7 0. 006 -24.2 0.887 -177.8 700 0.854 174.7 0.69 27.9 0. 006 -20.5 0.896 -178.8 750 0.858 173.3 0.60 24.8 0. 005 -18.2 0.901 -179.1 800 0.865 171.9 0.54 22.3 0. 005 -15.1 0.905 -179.8 850 0.873 170.8 0.49 20.2 0.005 -12.2 0.911 179.5 900 0.878 169.8 0.45 17.9 0.004 -1.7 0.918 178.9 950 0.880 168.8 0.41 16.1 0.004 4.3 0.922 178.3 1000 0.882 167.7 0.37 14. 2 0.004 11.2 0.932 177.8 1050 0.886 166.5 0.35 12. 4 0.004 21.6 0.931 177.1 1100 0.889 165.5 0.32 10. 7 0.004 29.8 0.935 176.5 1150 0.893 164.4 0.29 8. 9 0.004 33.2 0.939 175.8 1200 0.898 163.3 0.27 7. 5 0.004 40.9 0.944 175.1 1250 0.902 162.4 0.26 6. 2 0.005 46.7 0.943 174.6 1300 0.901 161.3 0.23 4. 7 0.005 50.8 0.948 174.1 1350 0.902 160.0 0.22 3. 3 0.005 54.5 0.948 173.4 1400 0.904 158.7 0.21 1. 8 0.006 57.8 0.954 173.1 1450 0.907 157.7 0.19 0. 4 0.006 55.3 0.954 172.5 1500 0.904 156.5 0.18 -0.8 0.007 60.5 0.953 171.6 1550 0.905 155.1 0.17 -2.4 0.007 62.1 0.958 171.0 1600 0.912 153.8 0.16 -3.1 0.007 61.1 0.959 170.7 1650 0.915 152.8 0.15 -4.2 0.008 64.3 0.956 170.4 1700 0.919 151.5 0.14 -5.8 0.008 63.2 0.958 169.3 1750 0.926 149.9 0.14 -6.8 0.009 62.7 0.964 168.9 1800 0.938 148.8 0.13 -7.8 0.009 63.0 0.965 168.4 1850 0.942 147.9 0.13 -8.6 0.010 62.6 0.963 167.8 1900 0.942 146.7 0.12 -9.3 0.010 61.9 0.965 167.0 1950 0.945 145.5 0.11 -10. 2 0.010 63.8 0.968 166.6 2000 0.946 144.7 0.11 -10. 6 0.011 62.4 0.965 166.3 2050 0.942 143.7 0.11 -11. 2 0.011 62.2 0.969 165.5 2100 0.939 142.3 0.10 -11. 8 0.012 61.2 0.973 164.9 2150 0.940 140.9 0.10 -12. 5 0.012 62.0 0.974 164.6 2200 0.942 139.8 0.09 -13. 3 0.012 61.3 0.974 164.2 2250 0.939 138.3 0.09 -14. 3 0.013 59.2 0.974 163.4 2300 0.937 136.8 0.08 -15. 3 0.013 59.6 0.976 163.0 2350 0.937 135.4 0.08 -16. 3 0.014 59.8 0.977 162.9 2400 0.935 134.1 0.08 -17. 5 0.014 58.9 0.972 162.0 2450 0.932 132.8 0.07 -18. 1 0.014 57.9 0.975 161.5 2500 0.931 131.3 0.07 -18. 7 0.014 57.7 0.977 161.2
rqa0009sxaqs preliminary r07ds0493ej0200 rev.2.00 page 21 of 21 jun 29, 2011 package dimensions 4.5 0.1 1.8 max 1.5 0.1 0.44 max 0.44 max 0.48 max 0.53 max 1.5 1.5 3.0 2.5 0.1 4.25 max 0.8 min 1 0.4 (1.5) (2.5) (0.4) (0.2) previous code plzz0004ca- aupa k / upakv mass[typ.] 0.050g sc-62 renesas code jeita package code unit: mm package name upak ordering information orderable part number quan tity shipping container rqa0009sxtl-e 1000 pcs. ? 178 mm reel, 12 mm emboss taping ?
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